1. ECFA Durham, September 20041 Recent progress on MIMOSA sensors A.Besson, on behalf of IReS/LEPSI : M. Deveaux, A. Gay, G. Gaycken, Y. Gornushkin, D. Grandjean, F. Guilloux, S. Heini, A. Himmi, Ch. Hu, K.Jaaskelainen, M. Pellicioli, H. Souffi-Kebbati, I. Valin, M. Winter, G. Claus, C. Colledani, G. Deptuch, W. Dulinski, M. Szelezliak (M6/M8 DAPNIA: Y. Degerli, E. Delagnes, N. Fourches, P. Lutz, F.Orsini) Fabrication technology Parameter optimization (pitch, T, diodes, etc.) Signal treatment and read-out speed Thinning Radiation tolerance

2. ECFA Durham, September 2004A.Besson2 MIMOSA 9 (1) Main features: –Techno opto. –Self Bias / Standard –Pitch 20/30/40  m –Small/large diodes (3/6  m) –With/without epi. 6 x 6  m 3.4 x 4.3  m 6 x 6  m 3T, 40  m 32 x 32 SB, 30  m 32 x 32 SB, 20  m 64 x 64 SB, 40  m 32 x 32 1.2 mm 0.96 mm 5 x 5  m Explore the different parameters

3. ECFA Durham, September 2004A.Besson3 MIMOSA 9 (2) Beam test @ CERN-SPS (120 GeV/c  - ) Self-Bias, Pitch = 20  m, diode 6 x 6  m 2 MPV ~ 24 Charge (1 pixel); MPV ~ 325 (9 pixels); MPV ~ 850 (25 pixels); MPV ~870

4. ECFA Durham, September 2004A.Besson4 MIMOSA 9 (3) F irst comparisons: –SB with 20/30  m pitch : eff ≥ 99.8% –Resolution ~ 1.5  m @ 20  m pitch –Analysis in progress:  Temperature  Chip without epi.  Hit selection optimization Sp. Resolution; SB, diode 3.4 x 4.3  m 2 StandardSelf Bias PITCH (  m) 40203040 Diode size (  m) 3.4 x 4.36 x 63.4 x 4.36 x 63.4 x 4.35 x 53.4 x 4.36 x 6 S/N (Seed)11.020.837.638.132.934.526.227.8 Efficiency90.35±0.498.1±0.1799.87±0.0599.94±0.0399.87±0.0799.81±0.0799.6±0.0997.8±0.23 Noise (e-) vs Diode surface  m 2

5. ECFA Durham, September 2004A.Besson5 Fast read-out architecture Different developments based on Mimosa 6 –VX DET layer 1-2:  Fast, column // readout, with hit selection –VX DET layer 3-4-5:  Multiple scans of the whole detector within train (r.o. ~200  s).  Then read the samples between trains  Integrate capacitors in each pixel (M7 and M8) Mimosa 7 –Features  photoFET.  25  m pitch, No epi., 0.35  m, 64x16 readout in // with CDS –Status  Being tested  Beam test in Oct. Mimosa 8 (with DAPNIA) –Features  25  m pitch, 8  m epi., 0.25  m, 128x32 readout in // with CDS  Signal discrimination –Status  Being tested

6. ECFA Durham, September 2004A.Besson6 Thinning Mimosa 5 thinned down to epi. layer –Beam test. @ CERN –S/N M5-B standard M5-B thinned down

7. ECFA Durham, September 2004A.Besson7 MIMOSTAR STAR exp. upgrade: 1 st proto sent for fabrication –Extension of the Vertex Detector (2 layers) –Running conditions  T amb. (higher leakage current). Readout time ~ 4ms –Features  Opto technology to reduce noise  TSMC 0.25 techno  Based on M5  Pitch = 30x30  m 2. 128x128 pixels  Surface: ~ 4 x 5 mm 2  Subdivision in 10 groups of columns  Pure analogic output. 10x10MHz output –Status  Expected back from fab. end Oct.

8. ECFA Durham, September 2004A.Besson8 Radiation hardness SUC 1: –Chip with 8  pixels design. 30  m pitch  Goal: study charge loss after irraditaion (X-ray) –Irradiation:  X-ray: 500kRad and 1MRad  Calibration with 55 Fe  Measure leakage current @ different T –Being analysed  Charge loss  for some pixel designs  Leakage current Next irradiation + beam test –M9 (X, n) –M5 (n)  Seems to stand 1 MRad

9. ECFA Durham, September 2004A.Besson9 Conclusion and outlook Geometry –Efficiency and resolution ok from 20 to 40  m New techno opto. AMS 0.35  m –Epi. Layer may change Chip read-out architecture –2 research lines  layer 1-2 : r.o. speed  Layer 3-4-5 : storage capacitors –2 proto being tested –Promising results Radiation hardness –Studies in progress –Evidence  stand > 0.5 MRad. Up to 1MRad. –M9 (n,X), M5 (n)

10. ECFA Durham, September 2004A.Besson10 Mimosa prototypes

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15. ECFA Durham, September 2004A.Besson15 Mimosa 9 (preliminary)

16. ECFA Durham, September 2004A.Besson16 Beam tests: résumé. 3 sessions (mai, juillet, aout). Chips testés: –M5B: 202, 205, 306. –M5 15  m: “nGD” –M9: 1,2 (avec epi.) et 7(sans epi.)  150k evts/run. 3/4 pts de Temp. Remarques –Inversion du trigger pour M5 15  m –Veto apres le reset pour M9. 2  10 frames.  ~ 50% d’efficacité… A faire: –Calibration M5 nGD. –M9 sans epi. –M5 et M9 irradiés –M7

17. ECFA Durham, September 2004A.Besson17