1. Date of download: 6/2/2016 Copyright © 2016 SPIE. All rights reserved. (a) Structure (side view) and (b) equivalent circuit of a conventional PSD. A PSD is composed of a photoelectric layer S, a resistive element layer R laminated on S, and signal current output terminals TA and TB connected to R. The photoelectric layer S is formed from a P-type semiconductor layer P, an insulator layer I, and an N-type semiconductor layer N. C is a bias terminal. IA and IB are output signal currents. Figure Legend: From: New types of semiconductor image position sensitive device Opt. Eng. 2009;48(9):093602-093602-5. doi:10.1117/1.3223637

2. Date of download: 6/2/2016 Copyright © 2016 SPIE. All rights reserved. (a) Conceptual configuration (upper view) and (b) equivalent circuit of a separate photoelectric device type of PSD. The photoelectric layer is separated into individual separated photoelectric elements Sg. T is a photosensitive element. TA, TB, C, IA, IB, and R are the same as in Fig.. Figure Legend: From: New types of semiconductor image position sensitive device Opt. Eng. 2009;48(9):093602-093602-5. doi:10.1117/1.3223637

3. Date of download: 6/2/2016 Copyright © 2016 SPIE. All rights reserved. Equivalent circuit of a new type of PSD that reduces errors produced by noise light such as background light. rd is a subtracting current limiting resistor, Sd is a diode for preventing interference, and D is a bias terminal for the subtracting current. TA, TB, C, and R are the same as in Fig.. Figure Legend: From: New types of semiconductor image position sensitive device Opt. Eng. 2009;48(9):093602-093602-5. doi:10.1117/1.3223637

4. Date of download: 6/2/2016 Copyright © 2016 SPIE. All rights reserved. Conceptual diagram of (a) a distribution of photoelectric current density when background light is present, and (b) a distribution of the photoelectric current density flowing into the resistive element layer as a result of the subtraction of photoelectric current from background light using the new type of PSD shown in Fig.. Figure Legend: From: New types of semiconductor image position sensitive device Opt. Eng. 2009;48(9):093602-093602-5. doi:10.1117/1.3223637

5. Date of download: 6/2/2016 Copyright © 2016 SPIE. All rights reserved. Equivalent circuit of the new type of PSD that does not use the diode for preventing interference. Figure Legend: From: New types of semiconductor image position sensitive device Opt. Eng. 2009;48(9):093602-093602-5. doi:10.1117/1.3223637

6. Date of download: 6/2/2016 Copyright © 2016 SPIE. All rights reserved. Computational result of the photoelectric current to be subtracted for the PSD shown in Fig., when ten subtracting current limiting resistors rd are used: n=10. Figure Legend: From: New types of semiconductor image position sensitive device Opt. Eng. 2009;48(9):093602-093602-5. doi:10.1117/1.3223637

7. Date of download: 6/2/2016 Copyright © 2016 SPIE. All rights reserved. Simulation result of image position detection using the new type of PSD. The detection errors for the incident position of a spot image on the PSD are shown. Figure Legend: From: New types of semiconductor image position sensitive device Opt. Eng. 2009;48(9):093602-093602-5. doi:10.1117/1.3223637

8. Date of download: 6/2/2016 Copyright © 2016 SPIE. All rights reserved. Simulation result of image position detection using the new type of PSD in case that the distribution of photoelectric current density of a noise light is not uniform to the PSD position and is not symmetric with respect to an incident position of a spot image. The detection errors for the incident position of a spot image on the PSD are shown. Figure Legend: From: New types of semiconductor image position sensitive device Opt. Eng. 2009;48(9):093602-093602-5. doi:10.1117/1.3223637

9. Date of download: 6/2/2016 Copyright © 2016 SPIE. All rights reserved. Equivalent circuit of a semiconductor D-PSD. Rd is a resistive element, and R acts as a dividing resistance for replenishing current. Figure Legend: From: New types of semiconductor image position sensitive device Opt. Eng. 2009;48(9):093602-093602-5. doi:10.1117/1.3223637

10. Date of download: 6/2/2016 Copyright © 2016 SPIE. All rights reserved. Conceptual diagram of distributions of generated photoelectric current density when a dark point image exists against a bright background light, and the replenishing electric current density of the photoelectric current using D-PSD. Figure Legend: From: New types of semiconductor image position sensitive device Opt. Eng. 2009;48(9):093602-093602-5. doi:10.1117/1.3223637

11. Date of download: 6/2/2016 Copyright © 2016 SPIE. All rights reserved. Simulation results of dark image position detection using a D-PSD. The position detection errors for a dark point image on the D- PSD are shown. Figure Legend: From: New types of semiconductor image position sensitive device Opt. Eng. 2009;48(9):093602-093602-5. doi:10.1117/1.3223637