1. Silicon Carbide Telescope GrV 2015

2. NUMEN project Nuclear Matrix Elements of Neutrinoless Double Beta Decays by Heavy Ion Double Charge Exchange Reactions 0νββ decay rate [T 1/2 ] -1 can be factorized as a phase-space factor G 0ν, the nuclear matrix element (NME) M 0 and a term f(m i,U ei ) containing the masses m i and the mixing coefficients U ei of the neutrino species The DCE ( 18 O, 18 Ne) reaction as a probe for the β + β + transitions and the ( 20 Ne, 20 O), or alternatively the ( 12 C, 12 Be), for the β - β - 12 C, 18 O, 20 Ne to energies between 15 and 30 MeV/u - The CS accelerator current upgrade from 100 W to 5 - 10 kW - The MAGNEX focal plane detector will be up graded from 1 khz to 100 khz Major upgrade of LNS facilities

3. Focal Plane - + Multiwire gas trackerand  E stage Wall of 60 stopping 7 X 5 cm 2 Silicon detectors surface covered 100 X 21 cm 2 Double-hit probability at 100 kHz > 30% SEGMENTATION !!! limited to 1 kHz From Multiwire gas tracker  to GEM gas tracker From 7 X 5 cm 2 silicon Wall  to 1x1 cm 2 telescopes wall 100 kHz Radiation hardness 10 14 ions/cm 2 in ten years of activity Si detector dead @ 10 9 implanted ions/cm 2

4. NUMEN requirements 1x1 cm 2  E-E telescope thickness of  E stage 100  m thickness of E stage 500-1000  m hard to the radiation damage good energy resolution (1-2 %) High stability (electric and thermal)  Wide bandgap (3.3eV)  lower leakage current than silicon  Signal (for MIP !): Diamond 36e/  m SiC 51e/  m Si89e/  m  more charge than diamond Si/SiC≈2  Higher displacement threshold than silicon  radiation harder than silicon NUMEN RD50 - CERN

5. Atom displacements Radiation Hardness Cluster defects dead zones no-recovery Messenger et al. IEEE TRANS. ON NUCL. SCIE., VOL. 50, NO. 6, 2003 NIEL (Non Ionising Energy Loss) Displacement of lattice atoms SiC higher displacement threshold than Silicon! Point-like defects Annealing heat treatment Vacancy + Interstitial V I

6. Experimental data SiC: CCE after irradiation RD50-collaboration M. De Napoli et al. NIMA 600 (2009) 618

7. Low leakage current Timing Insensible to visible light SiC performance G. Bertuccio et al. IEEE Trans. Nucl. Scie. 60, NO. 2, APRIL 2013 TOF distribution measured by the SiC detector for the Si-H-B (orange curve) and Si (blue curve) targets A. Picciotto et al. Phys. Rev. X 4, 031030 (2014) Xiaodong Zhang IEEE Trans. Nucl. Scie. VOL. 60, NO. 3, JUNE 2013  high energy resolution  X-rays detection  sub-nanoseconds  ToF application  neutrons and charged particles detection in plasmas Low noise electronics !

8. ELI-NP TDR1-Laser Driven NuclearPhysics Nuclear Reactions in Laser plasmas Pulsed neutron source Rutherford Appleton Laboratory Aims: user beamline for proof-of-principle experiments which might demonstrate the validity of new approaches, based on laser- driven proton sources, for potential future applications in the field of hadron-therapy

9. SiC detectors: state of art Thickness of EPI-Layer ≈ 80  m Detection surface Substracte Thickness ≈ 200  m Limits The Schottky diodes are fabricated by epitaxy onto high-purity 4H–SiC n-type substrate. The Schottky junction was realized by a 0,2 m  thick layer of Ni 2 Si deposited on the front surface 1x1 cm 2  E-E telescope thickness of  E stage 100  m thickness of E stage 500-1000  m Target

10. Defects can be electrically active (levels in the band gap) - capture and release electrons and holes from conduction and valence band  can be charged - can be generation/recombination centers - can be trapping centers

12. Organization of the project Participating INFN research units: INFN Laboratori Nazionali del Sud di Catania (LNS) INFN Sezione di Catania and “Gruppo collegato di Messina” (CT) INFN Sezione di Milano Bicocca (MI-B) INFN Sezione di Milano (MI-P) External institutions, involved in the project CNR-IMM – Catania (CNR_CT) Università degli Studi di Catania Università degli Studi di Messina Università degli Studi di Milano Bicocca Politecnico di Milano External companies, involved in the project Fondazione Bruno Kessler (FBK) – Trento (FBK) ST Microelectronics – Catania (ST) LPE – Catania (LPE)

13. TaskUnit(s) WP1Detector design Definition of the operative physical constraints for the experiments LNS, MI, ME S. TudiscoStudy of the optimal GeometryLNS, MI ME Optimized designLNS, IMM, FBK, ST Prototype designsLNS, IMM, FBK, ST Prototype assemblyLNS, IMM, FBK, ST Ion Beam Test a Test for NUMEN operative condition Laser-plasma test in operative condition ELI-MED, ELI-NP LNS, ME, MI-P Project coordination and managementLNS Work packages organization WP1 – Project coordinator and management TaskUnit(s) WP2Material Study and prototype construction Development of epitaxial processLPE, IMM F. La ViaEpitaxial layer and intrinsic wafer characterization IMM, FBK, ST,LPE Device definition: structure and processesLNS, IMM, FBK, ST, LPE Device realization IMM, FBK, ST, LPE Device test IMM, FBK, ST, LPE Device optimizationLNS, IMM, FBK, ST

14. TaskUnit(s) WP3Detection Test WP3.1 G.Gorini Neutrons detection testNeutron detectionMI-B, LNS Neutron irradiation testMI-B, LNS SiC - diamonds comparisonMI-B, LNS WP3.1 G. Bertuccio X-Ray detection testX-ray detectionMI-P, LNS Low noise electronicMI-P, LNS Material CharacterizationMI-P, LNS WP3.3 A. Trifirò Electron beam test Pulse Shape discrimination Packing design Electrons beam test ME, LNS Study of Pulse-Shape discriminationME, LNS Pulse-Shape electronicsME, LNS, FBK Study of telescope PackagesME, LNS, FBK WP3.4 P. Cirrone Laser-Plasmas testLaser-plasma testsLNS, ME, MI-P Laser-plasma tests in operative condition ELI-MED, ELI-NP LNS, ME, MI-P